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| Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION *With TO-220C package *High switching speed *High DC current gain *Wide area of safe operation *Complement to type 2SA1260 APPLICATIONS *60V/7A for High-Speed Drivers Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3146 ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.75 125 -55~125 CONDITIONS Open emitter Open base Open collector VALUE 70 60 5 7 40 W UNIT V V V A Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat)-1 VCE(sat)-2 ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;RBE= IC=5mA ;IE=0 IC=3.5A ,IB=7mA IC=3.5A ,IB=7mA VCB=40V, IE=0 VEB=5V; IC=0 IC=3.5A ; VCE=2V 2000 MIN 60 70 2SC3146 TYP. MAX UNIT V V 1.5 2.0 0.1 3.0 V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 2SC3146 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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